Orbital Hall currents from a 4.5 nm Cr layer, converted to spin current via 1.5 nm Pt, switch room-temperature 2D ferromagnet Fe3GaTe2 with 3.9x lower current density and 52% less power than 6 nm Pt.
Two-dimensional materials prospects for non-volatile spintronic memories,
2 Pith papers cite this work, alongside 422 external citations. Polarity classification is still indexing.
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Graphene transport in a NiI2 heterostructure exhibits magnetic-state-dependent anisotropic low-field magnetoresistance peaks absent in controls and suppressed above the NiI2 transition temperature.
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Harnessing orbital Hall effect for energy-efficient magnetization switching in room-temperature van der Waals ferromagnet Fe3GaTe2
Orbital Hall currents from a 4.5 nm Cr layer, converted to spin current via 1.5 nm Pt, switch room-temperature 2D ferromagnet Fe3GaTe2 with 3.9x lower current density and 52% less power than 6 nm Pt.
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Interfacial Magnetotransport in a NiI$_2$/Graphene Heterostructure
Graphene transport in a NiI2 heterostructure exhibits magnetic-state-dependent anisotropic low-field magnetoresistance peaks absent in controls and suppressed above the NiI2 transition temperature.