In MOCVD-grown CuCrO2, 5 at% nominal dopants yield at most about 2 at% incorporation, and electrical and optical properties remain dominated by oxygen excess rather than by the dopant.
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Extrinsic Dopants as Growth Modifiers in Cu-Cr-O delafossites: A Study of Incorporation Limits and Film Properties
In MOCVD-grown CuCrO2, 5 at% nominal dopants yield at most about 2 at% incorporation, and electrical and optical properties remain dominated by oxygen excess rather than by the dopant.