Carrier density and mobility in disordered silicon and silicon carbide obey anti-Meyer-Neldel statistics with proportional activation energies, yielding a power-law mobility-density relation.
the conductivity in a-Si:H exhibits a MNR because the statistical shift causes the carrier density to follow a MNR as well as the mobility
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Meyer-Neldel and anti-Meyer-Neldel rule in microcrystalline silicon and silicon carbide examined with Hall measurements
Carrier density and mobility in disordered silicon and silicon carbide obey anti-Meyer-Neldel statistics with proportional activation energies, yielding a power-law mobility-density relation.