Four in situ techniques simultaneously monitor Ga adsorption/desorption on GaN(0001); signals unified by kinetic model giving 2.87 eV adlayer desorption activation energy.
Growth ofhighqualityGaAslayersonSisubstratesbyMOCVD,
1 Pith paper cite this work. Polarity classification is still indexing.
1
Pith paper citing it
fields
physics.app-ph 1years
2026 1verdicts
UNVERDICTED 1representative citing papers
citing papers explorer
-
Simultaneously monitoring Ga adsorption and desorption kinetics on GaN(0001) using four in situ techniques
Four in situ techniques simultaneously monitor Ga adsorption/desorption on GaN(0001); signals unified by kinetic model giving 2.87 eV adlayer desorption activation energy.