High aspect ratio Fin-FET sensors with hafnium oxide dielectric demonstrate the best linearity and chemical stability for pH detection among tested materials.
Ibarlucea et all, Gating Hysteresis as an Indicator for Silicon Nanowire FET Biosensors, Appl
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High Performance Fin-FET electrochemical sensor with high-k dielectric materials
High aspect ratio Fin-FET sensors with hafnium oxide dielectric demonstrate the best linearity and chemical stability for pH detection among tested materials.