AFM nano-oxidation lithography positions GaAs quantum dots in free-standing circular Bragg gratings with 51 nm radial accuracy, delivering 245-fold photoluminescence enhancement and polarization stability below 5%.
Modified droplet epitaxy gaas/algaas quantum dots grown on a variable thickness wetting layer,
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A single-step top-down fabrication creates free-standing CBGs with GaAs QDs, delivering up to 700x photoluminescence enhancement, 68% extraction efficiency, 45 MHz count rates, and reduced fine-structure splitting to 1.3 μeV.
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Deterministic positioning of circular Bragg gratings using atomic force lithography for high-performance quantum dot light sources
AFM nano-oxidation lithography positions GaAs quantum dots in free-standing circular Bragg gratings with 51 nm radial accuracy, delivering 245-fold photoluminescence enhancement and polarization stability below 5%.
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Free-standing circular Bragg gratings enabling efficient GaAs quantum dot entangled photon pair sources
A single-step top-down fabrication creates free-standing CBGs with GaAs QDs, delivering up to 700x photoluminescence enhancement, 68% extraction efficiency, 45 MHz count rates, and reduced fine-structure splitting to 1.3 μeV.