HIMoC devices produce threshold-voltage shifts from 24.8 MeV/u heavy ions that are modeled as Gaussian charge-loss profiles and scale linearly with fluence times LET times area.
Explanation of the Charge Trapping Properties of Silicon Nitride Storage Lay- ers for NVMs—Part II: Atomistic and Electri- cal Modeling,
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A Heavy Ion Monitor on a Chip Based on a Non-Volatile Memory Architecture -- Part II: Device Characterization & Modeling
HIMoC devices produce threshold-voltage shifts from 24.8 MeV/u heavy ions that are modeled as Gaussian charge-loss profiles and scale linearly with fluence times LET times area.