Quantum dots in a commercial 22 nm FD-SOI CMOS device can be formed, counted, and detuned using common-mode source/drain voltage and barrier gates, with QTCAD simulation qualitatively matching measurements.
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Common-Mode Control and Confinement Inversion of Electrostatically Defined Quantum Dots in a Commercial CMOS Process
Quantum dots in a commercial 22 nm FD-SOI CMOS device can be formed, counted, and detuned using common-mode source/drain voltage and barrier gates, with QTCAD simulation qualitatively matching measurements.