A thin Ta buffer between Si and a TaN seed layer nearly quadruples the internal quality factor of superconducting coplanar waveguide resonators by suppressing nitrogen-induced interface disorder.
Structural and electrical properties of tantalum nitride thin films fabricated by using reactive radio-frequency magnetron sputtering:,
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Substrate-metal interface engineering enhances TaN/Ta thin film superconducting resonator performance
A thin Ta buffer between Si and a TaN seed layer nearly quadruples the internal quality factor of superconducting coplanar waveguide resonators by suppressing nitrogen-induced interface disorder.