InGaN/GaN multiple-quantum-well nanowire arrays made by top-down silica nanosphere lithography produce self-powered photoelectrochemical photodetectors with 330 mA/W responsivity at 365 nm.
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High-Performance Self-Powered Photoelectrochemical Detection Using Scalable InGaN/GaN Nanowire Arrays
InGaN/GaN multiple-quantum-well nanowire arrays made by top-down silica nanosphere lithography produce self-powered photoelectrochemical photodetectors with 330 mA/W responsivity at 365 nm.