Wafer-scale hybrid MBE produces BaTiO3 films on STO/Si with growth rates exceeding 75 nm/h and an effective EO coefficient of 248 pm/V, outperforming PLD-grown films at 220 pm/V.
STEM was performed on a double-aberration-corrected transmission electron microscope (Spectra 300, Thermo Fisher Scientific) at an accelerating voltage of 300 kV
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Wafer-scale hybrid molecular beam epitaxy of BaTiO3 and SrTiO3 on silicon
Wafer-scale hybrid MBE produces BaTiO3 films on STO/Si with growth rates exceeding 75 nm/h and an effective EO coefficient of 248 pm/V, outperforming PLD-grown films at 220 pm/V.