Optimized MBE growth of 22-nm-deep Ge quantum wells achieves a peak hole mobility of 105000 cm2/Vs at 2 K, the highest reported for shallow MBE-grown samples.
Gold, Mobility of the two-dimensional electron gas in AlGaAs/GaAs heterostructures at low electron densities, Applied Physics Letters54, 2100 (1989)
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Growth optimization of shallow Ge quantum wells grown by molecular beam epitaxy
Optimized MBE growth of 22-nm-deep Ge quantum wells achieves a peak hole mobility of 105000 cm2/Vs at 2 K, the highest reported for shallow MBE-grown samples.