Internal photoemission measurements on a SiGeSn/GeSn quantum well yield type-I band alignment with electron and hole effective barriers of about 22 and 50 meV.
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Lasing in direct-bandgap GeSn alloy grown on Si,
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Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect
Internal photoemission measurements on a SiGeSn/GeSn quantum well yield type-I band alignment with electron and hole effective barriers of about 22 and 50 meV.