Starting from QED scattering, the paper derives dipolar spin interactions for two qubits and claims a distance-to-the-fourth-power effective interaction between two bath spins mediated by a virtual fermion.
Quantum CNOT Gate for Spins in Silicon
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abstract
Single qubit rotations and two-qubit CNOT operations are crucial ingredients for universal quantum computing. While high fidelity single qubit operations have been achieved using the electron spin degree of freedom, realizing a robust CNOT gate has been a major challenge due to rapid nuclear spin dephasing and charge noise. We demonstrate an efficient resonantly-driven CNOT gate for electron spins in silicon. Our platform achieves single-qubit rotations with fidelities >99%, as verified by randomized benchmarking. Gate control of the exchange coupling allows a quantum CNOT gate to be implemented with resonant driving in ~200 ns. We use the CNOT gate to generate a Bell state with 75% fidelity, limited by quantum state readout. Our quantum dot device architecture opens the door to multi-qubit algorithms in silicon.
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Microscopic QED origin of spin entanglement
Starting from QED scattering, the paper derives dipolar spin interactions for two qubits and claims a distance-to-the-fourth-power effective interaction between two bath spins mediated by a virtual fermion.