NOR IGZO FeFET bitcells scale to 0.016 um2 SRAM-like area and sub-5 ns read latency but incur sensing margin loss from sneak currents unless positive-Vt engineering is applied.
2nm Platform Technology Featuring Energy -Efficient Nanosheet Transistors and Interconnects Co-Optimized with 3DIC for AI, HPC and Mobile SoC Applications,
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DTCO Exploration of NOR-Type IGZO FeFETs for Read-Dominated Memories
NOR IGZO FeFET bitcells scale to 0.016 um2 SRAM-like area and sub-5 ns read latency but incur sensing margin loss from sneak currents unless positive-Vt engineering is applied.