Back-gated IGZO nFETs fabricated in a 300mm fab show threshold voltage variability as low as 20mV sigma, with a newly reported spinel IGZO phase.
Challenge of crystalline IGZO ceramics to silicon LSI - Its application to AI and displays
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Sub-40mV Sigma-VTH IGZO nFETs in 300mm Fab
Back-gated IGZO nFETs fabricated in a 300mm fab show threshold voltage variability as low as 20mV sigma, with a newly reported spinel IGZO phase.