A temperature-dependent surface resonant state emerges in TiSe2 from CDW symmetry breaking, with its spectral weight collapsing at 160 K below the bulk transition temperature of 202 K.
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Strain engineering converts semiconducting 7aGNRsH to conductive across IR-visible-UV while metallic 7aGNRsH-B and 7aGNRsH-V retain non-zero conductivity; Berry curvature localizes differently under strain.
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Emergent surface resonance from charge density wave symmetry breaking in TiSe2
A temperature-dependent surface resonant state emerges in TiSe2 from CDW symmetry breaking, with its spectral weight collapsing at 160 K below the bulk transition temperature of 202 K.
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First-principles calculations of electrical conductivities of edge-modified graphene nanoribbons: strain effect
Strain engineering converts semiconducting 7aGNRsH to conductive across IR-visible-UV while metallic 7aGNRsH-B and 7aGNRsH-V retain non-zero conductivity; Berry curvature localizes differently under strain.