For GaAs/AlGaAs nanowires on a two-inch silicon wafer, photoluminescence intensity varies by 35% but carrier lifetime varies by only 9%, indicating uniform material quality with intensity differences driven by nanowire density and orientation.
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Wafer-scale correlated morphology and optoelectronic properties in GaAs/AlGaAs core-shell nanowires
For GaAs/AlGaAs nanowires on a two-inch silicon wafer, photoluminescence intensity varies by 35% but carrier lifetime varies by only 9%, indicating uniform material quality with intensity differences driven by nanowire density and orientation.