For 4 unit-cell SrRuO3 films, hump-like Hall features coexist with single-step magnetization hysteresis, ruling out inhomogeneous anomalous Hall effect alone and favoring a topological Hall contribution.
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Hump-like structure in Hall signal from SrRuO$_3$ ultra-thin films without inhomogeneous anomalous Hall effect
For 4 unit-cell SrRuO3 films, hump-like Hall features coexist with single-step magnetization hysteresis, ruling out inhomogeneous anomalous Hall effect alone and favoring a topological Hall contribution.