DFT calculations predict that CrI3 proximity induces a 40 meV exchange bias in MnBi2Te4 films, enabling zero-field QAH states with Chern numbers 1 and 3.
Gapless Dirac surface states in the antiferromagnetic topological insulator MnBi2Te4
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abstract
We use high-resolution, tunable angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT) calculations to study the electronic properties of single crystals of MnBi2Te4, a material that was predicted to be the first intrinsic antiferromagnetic (AFM) topological insulator. We observe both bulk and surface bands in the electronic spectra, in reasonable agreement with the DFT calculations results. In striking contrast to the earlier literatures showing a full gap opening between two surface band manifolds along (0001) direction, we observed a gapless Dirac cone remain protected in MnBi2Te4 across the AFM transition (TN = 24 K). Our data also reveal the existence of a second Dirac cone closer to the Fermi level, predicted by band structure calculations. Whereas the surface Dirac cones seem to be remarkably insensitive to the AFM ordering, we do observe splitting of the bulk band that develops below the TN . Having a moderately high ordering temperature, MnBi2Te4 provides a unique platform for studying the interplay between topology and magnetic ordering.
fields
cond-mat.mtrl-sci 1years
2019 1verdicts
CONDITIONAL 1representative citing papers
citing papers explorer
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Exchange Bias and Quantum Anomalous Hall Effect in the MnBi2Te4-CrI3 Heterostructure
DFT calculations predict that CrI3 proximity induces a 40 meV exchange bias in MnBi2Te4 films, enabling zero-field QAH states with Chern numbers 1 and 3.