TCAD models reproduce the high-power response saturation of TeraFET detectors and attribute it to gate leakage in AlGaAs/InGaAs and AlGaN/GaN HFETs and to avalanche and velocity saturation in Si MOSFETs.
Detection, mixing, and frequency mul- tiplication of terahertz radiation by two-dimensional electronic fluid,
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TCAD model for TeraFET detectors operating in a large dynamic range
TCAD models reproduce the high-power response saturation of TeraFET detectors and attribute it to gate leakage in AlGaAs/InGaAs and AlGaN/GaN HFETs and to avalanche and velocity saturation in Si MOSFETs.