Experimental measurements on broad-area 1300 nm lasers show that a highly strained In0.74Ga0.26As/In0.53Al0.25Ga0.22As superlattice active region yields ~6 cm^{-1} internal loss, ~500 A/cm^{2} transparency current density, 46 cm^{-1} modal gain, 53% internal efficiency, and characteristic temps T0=
The influence of growth conditions on carrier recombination mechanisms in 1.3 μm GaAsSb/GaAs quantum well lasers,
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Gain and Threshold Improvements of 1300 nm Lasers based on InGaAs/InAlGaAs Superlattice Active Regions
Experimental measurements on broad-area 1300 nm lasers show that a highly strained In0.74Ga0.26As/In0.53Al0.25Ga0.22As superlattice active region yields ~6 cm^{-1} internal loss, ~500 A/cm^{2} transparency current density, 46 cm^{-1} modal gain, 53% internal efficiency, and characteristic temps T0=