Vertical-geometry Ti-(Ga,Mn)N Schottky diode shows barrier height close to other GaN junctions but ideality factor >1.5 below 300 K, with >10 MΩ resistance at room temperature.
Northrup, Screw dis locations in GaN: The Ga -filled core model, Appl
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Electrical characteristics of vertical-geometry Schottky junction to magnetic insulator (Ga,Mn)N heteroepitaxially grown on sapphire
Vertical-geometry Ti-(Ga,Mn)N Schottky diode shows barrier height close to other GaN junctions but ideality factor >1.5 below 300 K, with >10 MΩ resistance at room temperature.