Freestanding fluoropolymer (CYTOP) films are transferred as gate dielectrics onto hydrogen-terminated diamond FETs, giving ~7–8 MV/cm breakdown, ~400 cm²/V·s hole mobility, and ≤3×10¹¹ cm⁻²eV⁻¹ interface trap density.
Enhancement-mode hydrogenated diamond metal -oxide semiconductor field-effect transistors with Y2O3 oxide insulator grown by electron beam evaporator
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Transfer of Freestanding Fluoropolymer Films for Advanced Semiconductor Devices
Freestanding fluoropolymer (CYTOP) films are transferred as gate dielectrics onto hydrogen-terminated diamond FETs, giving ~7–8 MV/cm breakdown, ~400 cm²/V·s hole mobility, and ≤3×10¹¹ cm⁻²eV⁻¹ interface trap density.