10% W-doped SnO2 TFTs made by low-temperature ALD show best performance after 300°C O2 annealing, with Ion/Ioff reaching 10^9, reduced hysteresis, and low bias stress shift, as an indium-free BEOL option.
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ALD W-Doped SnO$_2$ TFTs for Indium-Free BEOL Electronics
10% W-doped SnO2 TFTs made by low-temperature ALD show best performance after 300°C O2 annealing, with Ion/Ioff reaching 10^9, reduced hysteresis, and low bias stress shift, as an indium-free BEOL option.