The stability threshold of a non-Hermitian antiferromagnetic resonance, not the exceptional point, governs electrically switchable helicity-selective absorption in the sub-THz regime.
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Edelstein effect is intrinsic in 2H-VTe2 with magnetization-dependent spin components that become stacking-tunable in bilayers via interlayer sliding.
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Non-Hermitian control of helicity-selective antiferromagnetic resonance
The stability threshold of a non-Hermitian antiferromagnetic resonance, not the exceptional point, governs electrically switchable helicity-selective absorption in the sub-THz regime.
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Magnetization-dependent and stacking-tunable Edelstein effect in two-dimensional magnet 2H-VTe2
Edelstein effect is intrinsic in 2H-VTe2 with magnetization-dependent spin components that become stacking-tunable in bilayers via interlayer sliding.