Al2O3 passivation narrows T center optical linewidths by up to 57%, with 11 nm appearing optimal and a 75 MHz upper bound on homogeneous linewidth.
Title resolution pending
1 Pith paper cite this work. Polarity classification is still indexing.
1
Pith paper citing it
fields
quant-ph 1years
2026 1verdicts
CONDITIONAL 1representative citing papers
citing papers explorer
-
Surface passivation for narrowing optical linewidth of silicon T centers in nanophotonic devices
Al2O3 passivation narrows T center optical linewidths by up to 57%, with 11 nm appearing optimal and a 75 MHz upper bound on homogeneous linewidth.