Gate-tunable analog memcapacitance is demonstrated in LaAlO3/SrTiO3 interface devices, originating from lateral floating gate charge localization with a supporting model.
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Gate-controlled analog memcapacitance in LaAlO3/SrTiO3 interface-based devices
Gate-tunable analog memcapacitance is demonstrated in LaAlO3/SrTiO3 interface devices, originating from lateral floating gate charge localization with a supporting model.