AlSb in cubic and hexagonal phases shows quasi-direct band gaps of 1.71 eV and 1.50 eV with strong visible-UV absorption and increasing power factor with carrier concentration when computed with mBJ+U.
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Eu doping in plasma-assisted MBE-grown CdO/Si diodes raises rectifying factor and responsivity while enabling zero-bias photocurrent across visible to near-IR wavelengths.
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Optoelectronic and Thermoelectric Properties of High-Performance AlSb Semiconductors
AlSb in cubic and hexagonal phases shows quasi-direct band gaps of 1.71 eV and 1.50 eV with strong visible-UV absorption and increasing power factor with carrier concentration when computed with mBJ+U.
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Eu-assisted enhancement of photoresponse in MBE-grown CdO/Si photodetectors
Eu doping in plasma-assisted MBE-grown CdO/Si diodes raises rectifying factor and responsivity while enabling zero-bias photocurrent across visible to near-IR wavelengths.