CE-65v2 MAPS test structures in 65 nm TPSCo show about 5% gain uniformity, around 1.5 to 2 micrometer spatial resolution at low thresholds, and over 99% efficiency up to roughly 180 electron seed threshold for the Modified with Gap process.
Dorokhov et al.,High resistivity CMOS pixel sensors and their application to the STAR PXL detector, Nucl
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Characterisation of analogue MAPS produced in the 65 nm TPSCo process
CE-65v2 MAPS test structures in 65 nm TPSCo show about 5% gain uniformity, around 1.5 to 2 micrometer spatial resolution at low thresholds, and over 99% efficiency up to roughly 180 electron seed threshold for the Modified with Gap process.