Ferroelectric switching in sputtered Al0.92Sc0.08N/GaN appears to initiate at the GaN interface, based on post-switching STEM images.
Bastard \ and\ author J
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Interfacial Polarization Switching in Al0.92Sc0.08N/GaN Heterostructures Grown by Sputter Epitaxy
Ferroelectric switching in sputtered Al0.92Sc0.08N/GaN appears to initiate at the GaN interface, based on post-switching STEM images.