Presents a DFNG model for ferroelectric domain nucleation and growth under arbitrary voltage waveforms to enable predictive materials-to-circuit co-design.
Besides a higher growth dimension compared to HZO, BTO also exhibits a much lower Merz barrier (V a) and heterogeneous nucleation density (A)
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Ferroelectric dynamic-field-driven nucleation and growth model for predictive materials-to-circuit co-design
Presents a DFNG model for ferroelectric domain nucleation and growth under arbitrary voltage waveforms to enable predictive materials-to-circuit co-design.