Experimental demonstration of Ge concentration modulations in Si quantum wells with periods from 2.00 nm to 0.49 nm (including at k0 and 2k0/3), characterized by X-ray and STEM showing high homogeneity and gradients up to 20 at-%/nm, with k·p simulations suggesting valley splitting enhancement in 2k
Epitaxy of strained, nuclear-spin free 76Ge quantum wells from solid source materials,
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Sharp periodic Ge concentration modulations beyond the conduction band valley wavevector $k_0$ in nuclear spin-free Si quantum wells
Experimental demonstration of Ge concentration modulations in Si quantum wells with periods from 2.00 nm to 0.49 nm (including at k0 and 2k0/3), characterized by X-ray and STEM showing high homogeneity and gradients up to 20 at-%/nm, with k·p simulations suggesting valley splitting enhancement in 2k