A nine-transistor current-mode bistable memory cell in 180 nm CMOS is presented with independent tuning of threshold, hysteresis, and gain, shown via schematic simulations for spike-based logic gates and recurrent neural units.
Accurate deep neural network inference using computational phase-change memory
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A Fully Tunable Ultra-Low Power Current-Mode Memory Cell in Standard CMOS Technology
A nine-transistor current-mode bistable memory cell in 180 nm CMOS is presented with independent tuning of threshold, hysteresis, and gain, shown via schematic simulations for spike-based logic gates and recurrent neural units.
- Beyond Silicon: Materials, Mechanisms, and Methods for Physical Neural Computing