Homogeneous graphene/h-BN interfaces show strong vertical thermal conductance reduction under strain and twist, whereas heterogeneous interfaces are insensitive to twist but respond to strain.
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cond-mat.mes-hall 2years
2026 2verdicts
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Derives exact solutions for Dirac fermions in magnetically confined WSe2 quantum dots using hypergeometric and Bessel functions, demonstrating carrier localization and resonance peaks.
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Strain and Twist Engineering of Interfacial Thermal Transport in Homo- and Hetero-Interfaces of Graphene and Hexagonal Boron Nitride
Homogeneous graphene/h-BN interfaces show strong vertical thermal conductance reduction under strain and twist, whereas heterogeneous interfaces are insensitive to twist but respond to strain.
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Confinement in a magnetically induced WSe$_2$ quantum dots
Derives exact solutions for Dirac fermions in magnetically confined WSe2 quantum dots using hypergeometric and Bessel functions, demonstrating carrier localization and resonance peaks.