STM potentiometry on Bi films shows resistivity dipole amplitude scaling linearly with hole size at small defects then saturating at large defects, allowing extraction of Fermi wavevector and mean free path.
Romanyuk, Influence of the step properties on sub- monolayer growth of Ge and Si at the Si(111) surface , Ph.D
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Imaging the transition from diffusive to Landauer resistivity dipoles
STM potentiometry on Bi films shows resistivity dipole amplitude scaling linearly with hole size at small defects then saturating at large defects, allowing extraction of Fermi wavevector and mean free path.