A thin-contact, thick-channel IGZO transistor achieves 20 cm2/Vs mobility and a 15 mV threshold shift after stress, breaking the performance/reliability tradeoff.
Rha, “, IEEE Trans
1 Pith paper cite this work. Polarity classification is still indexing.
1
Pith paper citing it
fields
cond-mat.mtrl-sci 1years
2025 1verdicts
CONDITIONAL 1representative citing papers
citing papers explorer
-
Innovative Oxide Transistor Satisfying Performance and Reliability Simultaneously by Understanding of Physics and Materials Properties
A thin-contact, thick-channel IGZO transistor achieves 20 cm2/Vs mobility and a 15 mV threshold shift after stress, breaking the performance/reliability tradeoff.