GeSn aspect ratio trapping growth is demonstrated for the first time, reaching 6 to 8% Sn in a self-induced Ge core/GeSn shell and below 1% Sn in the bulk.
Local Loading Effect in Selective Silicon Epitaxy
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Investigation of GeSn aspect ratio trapping growth up to 8% Sn
GeSn aspect ratio trapping growth is demonstrated for the first time, reaching 6 to 8% Sn in a self-induced Ge core/GeSn shell and below 1% Sn in the bulk.