Device area selects between distributed tunneling and localized filamentary memristive transport in Hf0.5Zr0.5O2 devices, with a statistical nucleation model giving a crossover area of ~10^3 μm² that correlates with ferroelectric wake-up.
Sawa, Resistive switching in transition metal oxides, Materials Today11, 28 (2008)
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Device-area selection of memristive transport regimes in epitaxial $Hf_{0.5}Zr_{0.5}O_{2}$-based ferroelectric devices
Device area selects between distributed tunneling and localized filamentary memristive transport in Hf0.5Zr0.5O2 devices, with a statistical nucleation model giving a crossover area of ~10^3 μm² that correlates with ferroelectric wake-up.