First-principles calculations predict the Mo_Zn-V_O complex in ZnO as an optically addressable spin qubit with high quantum yield, small Huang-Rhys factor of ~5, and T2 ~4 ms limited by 0.035 ppm impurities.
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First-principles and k·p study of strained HgTe shows linearly k-dependent higher-order C4 strain terms produce nontrivial sub-band splitting, explaining camel-back features and supporting a Weyl semimetal phase under compression.
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Deep Spin Defects in Zinc Oxide for High-Fidelity Single-Shot Readout
First-principles calculations predict the Mo_Zn-V_O complex in ZnO as an optically addressable spin qubit with high quantum yield, small Huang-Rhys factor of ~5, and T2 ~4 ms limited by 0.035 ppm impurities.
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Anisotropic sub-band splitting mechanisms in strained HgTe: a first principles study
First-principles and k·p study of strained HgTe shows linearly k-dependent higher-order C4 strain terms produce nontrivial sub-band splitting, explaining camel-back features and supporting a Weyl semimetal phase under compression.