Hydrogen termination of Si(100) lowers the density of donor-like and two-level traps at the Si-SiO2 interface, as measured by fm-AFM dissipation imaging, with hydrogen-resist-lithography-style samples showing the largest reduction.
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Hydrogen Passivation Effects on Spatially Resolved Charge Trap Densities in Si(100)-SiO$_2$
Hydrogen termination of Si(100) lowers the density of donor-like and two-level traps at the Si-SiO2 interface, as measured by fm-AFM dissipation imaging, with hydrogen-resist-lithography-style samples showing the largest reduction.