First kilobyte-scale AlScN ferroelectric diode crossbar arrays operate without selectors, show 95.2% yield, and switch at 600 degrees Celsius.
Then, a 10 nm HfOx or AlOx dielectric layer is deposited at 250 °C by atomic layer deposition (ALD) using a Cambridge Nanotech S200 system
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Kilobyte-Scale, Selector-Free, Temperature-Hard AlScN Ferroelectric Diode Crossbar Arrays
First kilobyte-scale AlScN ferroelectric diode crossbar arrays operate without selectors, show 95.2% yield, and switch at 600 degrees Celsius.