Increasing Te substitution in Bi2(Se1-xTex)3 lowers the Dirac point binding energy and bulk DOS, producing a metallic-to-semiconducting resistivity transition with surface-state dominance at high Te.
Chemical tuning of electronic and transport properties of the Bi-Se-Te family of topological insulators
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abstract
We use laser-based Angle-Resolved Photoemission Spectroscopy (ARPES) to study how chemical substitution modifies the electronic properties of the Bi2(Se{1-x}Tex)3 (BiSeTe) family of topological insulators. We find that increasing the Te content lowers the chemical potential, leading to a decrease in the binding energy of the Dirac point and a reduction in the density of states originating from the bulk band. This reduction leads to a transition from metallic to semiconducting temperature dependence of the resistivity. For the highest Te concentration, the resistivity nearly saturates at the lowest temperatures. The presence of this plateau indicates that metallic topological surface states dominate the conductance, opening the possibility of studying their transport properties.
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Chemical tuning of electronic and transport properties of the Bi-Se-Te family of topological insulators
Increasing Te substitution in Bi2(Se1-xTex)3 lowers the Dirac point binding energy and bulk DOS, producing a metallic-to-semiconducting resistivity transition with surface-state dominance at high Te.