Sintered In(OH)3 targets deposit hydrogen-rich In2O3 films whose annealed transistors reach field-effect mobility near 81 cm2 V-1 s-1 without external hydrogen gas.
Novel top‐gate zinc oxide thin‐film transistors (ZnO TFTs) for AMLCDs
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Indium Hydroxide Ceramic Targets: A Breakthrough in High-Mobility Thin-Film Transistor Technology
Sintered In(OH)3 targets deposit hydrogen-rich In2O3 films whose annealed transistors reach field-effect mobility near 81 cm2 V-1 s-1 without external hydrogen gas.