Nanoscale Au/S-BTBT-CONHR/NiFe devices show a low-field, room-temperature magnetoresistance effect attributed to chirality-induced spin selectivity.
Yoshitake, Work Function and Band Alignment of Electrode Materials, National Institute for Materials Science, Japan, 2021
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Magnetoresistance effect based on spin-selective transport in nanodevices using chiral molecules
Nanoscale Au/S-BTBT-CONHR/NiFe devices show a low-field, room-temperature magnetoresistance effect attributed to chirality-induced spin selectivity.