Integrating thin InSe with a Mie-resonant Si3N4 waveguide reduces excitonic decay time by a factor of up to three, yielding Purcell factors of approximately 3 for out-of-plane and 2.1 for in-plane excitons.
During this process, the material was removed from the areas not protected by the mask down to the SiO 2 layer
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Purcell enhancement in layered InSe on the Mie-resonant silicon nitride waveguide
Integrating thin InSe with a Mie-resonant Si3N4 waveguide reduces excitonic decay time by a factor of up to three, yielding Purcell factors of approximately 3 for out-of-plane and 2.1 for in-plane excitons.