An integrated UHV MBE-plus-optical-spectroscopy cluster enables in-situ, spatially resolved photoluminescence and Raman measurements on as-grown reactive 2D semiconductors while preserving pristine surfaces.
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Wafer-scale MOCVD-grown GaSe 2D nanosheets show defect-induced localized emission with single-photon character (g2(0)=0.15) suitable for classical and non-classical light sources.
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Ultra-high-vacuum cluster tool for epitaxial synthesis and optical spectroscopy of reactive 2D materials
An integrated UHV MBE-plus-optical-spectroscopy cluster enables in-situ, spatially resolved photoluminescence and Raman measurements on as-grown reactive 2D semiconductors while preserving pristine surfaces.
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Localized Excitonic Emission in Wafer-Scale MOCVD-Grown GaSe 2D Nanosheets for Classical and Non-Classical Light Sources
Wafer-scale MOCVD-grown GaSe 2D nanosheets show defect-induced localized emission with single-photon character (g2(0)=0.15) suitable for classical and non-classical light sources.