Sulfur-rich and cooler chemical-vapor-transport growth conditions reduce the density of a characteristic electrically active defect in CrSBr by up to an order of magnitude.
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Growth-controlled suppression of electrically active defects in CrSBr
Sulfur-rich and cooler chemical-vapor-transport growth conditions reduce the density of a characteristic electrically active defect in CrSBr by up to an order of magnitude.