A closed-form expression for short-time signal development in silicon diode sensors shows that impact-ionization gain in an idealized LGAD detector retains an advantage over PIN diodes at frame rates up to 10 GHz.
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Signal Development for Saturated Ultrafast Sensors with Impact Ionization Gain
A closed-form expression for short-time signal development in silicon diode sensors shows that impact-ionization gain in an idealized LGAD detector retains an advantage over PIN diodes at frame rates up to 10 GHz.