Engineering the dielectric environment around 2D semiconductors can create confining potentials that localize excitons and discretize their center-of-mass energies by tens of meV.
Electron-hole plasma in direct-gap ga1-xalx as and k-selection rule
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Exciton localization in two-dimensional semiconductors through modification of the dielectric environment
Engineering the dielectric environment around 2D semiconductors can create confining potentials that localize excitons and discretize their center-of-mass energies by tens of meV.